Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

M. Bär; M. Wimmer; R. G. Wilks; M. Roczen; D. Gerlach; F. Ruske; K. Lips; B. Rech; L. Weinhardt; M. Blum; S. Pookpanratana; S. Krause; Y. Zhang; C. Heske; W. Yang; J. D. Denlinger

doi:10.1063/1.3462316

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

M. Bär^*, M. Wimmer, R. G. Wilks, M. Roczen, D. Gerlach, F. Ruske, K. Lips, B. Rech, L. Weinhardt, M. Blum, S. Pookpanratana, S. Krause, Y. Zhang, C. Heske, W. Yang, J. D. Denlinger

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 °C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO₂ interlayer, an effective thickness of (5±2) nm after SPC could be estimated.

Original language	English
Article number	072105
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3462316
Publication status	Published - 16-Aug-2010
Externally published	Yes

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Bär, M., Wimmer, M., Wilks, R. G., Roczen, M., Gerlach, D., Ruske, F., Lips, K., Rech, B., Weinhardt, L., Blum, M., Pookpanratana, S., Krause, S., Zhang, Y., Heske, C., Yang, W., & Denlinger, J. D. (2010). Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface. Applied Physics Letters, 97(7), Article 072105. https://doi.org/10.1063/1.3462316

@article{02976e69dff44de9a58c54ee836095b3,

title = "Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface",

abstract = "The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 °C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5±2) nm after SPC could be estimated.",

author = "M. B{\"a}r and M. Wimmer and Wilks, {R. G.} and M. Roczen and D. Gerlach and F. Ruske and K. Lips and B. Rech and L. Weinhardt and M. Blum and S. Pookpanratana and S. Krause and Y. Zhang and C. Heske and W. Yang and Denlinger, {J. D.}",

note = "Funding Information: The authors thank Forschungszentrum J{\"u}lich and CSG Solar for providing the substrates. This work (the ALS) was supported by the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety under Contract No. 0327693H (the Department of Energy, Basic Energy Sciences, Contract No. DE-AC02-05CH11231). Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

month = aug,

day = "16",

doi = "10.1063/1.3462316",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "7",

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Bär, M, Wimmer, M, Wilks, RG, Roczen, M, Gerlach, D, Ruske, F, Lips, K, Rech, B, Weinhardt, L, Blum, M, Pookpanratana, S, Krause, S, Zhang, Y, Heske, C, Yang, W & Denlinger, JD 2010, 'Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface', Applied Physics Letters, vol. 97, no. 7, 072105. https://doi.org/10.1063/1.3462316

TY - JOUR

T1 - Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

AU - Bär, M.

AU - Wimmer, M.

AU - Wilks, R. G.

AU - Roczen, M.

AU - Gerlach, D.

AU - Ruske, F.

AU - Lips, K.

AU - Rech, B.

AU - Weinhardt, L.

AU - Blum, M.

AU - Pookpanratana, S.

AU - Krause, S.

AU - Zhang, Y.

AU - Heske, C.

AU - Yang, W.

AU - Denlinger, J. D.

N1 - Funding Information: The authors thank Forschungszentrum Jülich and CSG Solar for providing the substrates. This work (the ALS) was supported by the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety under Contract No. 0327693H (the Department of Energy, Basic Energy Sciences, Contract No. DE-AC02-05CH11231). Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 °C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5±2) nm after SPC could be estimated.

AB - The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 °C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5±2) nm after SPC could be estimated.

UR - http://www.scopus.com/inward/record.url?scp=77956021408&partnerID=8YFLogxK

U2 - 10.1063/1.3462316

DO - 10.1063/1.3462316

M3 - Article

AN - SCOPUS:77956021408

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072105

ER -

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

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