Inducing and Manipulating Heteroelectronic States in a Single MoS2 Thin Flake

Qihong Chen, Jianming Lu, Lei Liang, Oleksandr Zheliuk, Abdurrahman Ali El Yumin, P Sheng, Jianting Ye

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Abstract

By dual gating a few-layer MoS2 flake, we induce spatially separated electronic states showing superconductivity and Shubnikov–de Haas (SdH) oscillations. While the highly confined superconductivity forms at the K/K′ valleys of the topmost layer, the SdH oscillations are contributed by the electrons residing in the Q/Q′ valleys of the rest of the bottom layers, which is confirmed by the extracted Landau level degeneracy of 3, electron effective mass of 0.6me, and carrier density of 5×10^12  cm^−2. Mimicking conventional heterostructures, the interaction between the heteroelectronic states can be electrically manipulated, which enables “bipolarlike” superconducting transistor operation. The off-on-off switching pattern can be continuously accessed at low temperatures by a field effect depletion of carriers with a negative back gate bias and the proximity effect between the top superconducting layer and the bottom metallic layers that quenches the superconductivity at a positive back gate bias.
Original languageEnglish
Article number147002
Number of pages6
JournalPhysical Review Letters
Volume119
Issue number14
DOIs
Publication statusPublished - 5-Oct-2017

Keywords

  • ELECTRONICS
  • FILMS
  • DER-WAALS HETEROSTRUCTURES
  • TRANSITION-METAL DICHALCOGENIDES
  • INDUCED SUPERCONDUCTIVITY
  • MONOLAYER WSE2
  • GATED MOS2
  • INSULATOR
  • ELECTRONICS

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