Abstract
Spectra of positively charged secondary ions from thermally grown SiO(2) films were recorded in a time-of-flight secondary ion mass spectrometry scheme. Ablation of cluster ions was induced by the impact of slow (4 keV/u) Au(69+) projectiles. The intensities of Si(x)O(y)H(z)(+), (x=1-22, y=1-44, z=0-7) clusters are found to depend sensitively on the oxygen to silicon ratio and also on the hydrogen content. We find that oxygen rich clusters, y=2x+1, and, in one case, y=2x+2, can be stabilized by the incorporation of two additional hydrogen atoms in the cluster. (C) 2000 American Institute of Physics. [S0021-9606(00)70630-1].
Original language | English |
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Article number | PII [S0021-9606(00)70630-1] |
Pages (from-to) | 2419-2422 |
Number of pages | 4 |
Journal | Journal of Chemical Physics |
Volume | 113 |
Issue number | 6 |
DOIs | |
Publication status | Published - 8-Aug-2000 |
Keywords
- MASS-SPECTROMETRY
- ION EMISSION
- SLOW
- SURFACES
- TIME
- SIO2