Influence of hydrogen on the stability of positively charged silicon dioxide clusters

T. Schenkel, T. Schlatholter, M. W. Newman, G. A. Machicoane, J. W. McDonald, A. V. Hamza

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Abstract

Spectra of positively charged secondary ions from thermally grown SiO(2) films were recorded in a time-of-flight secondary ion mass spectrometry scheme. Ablation of cluster ions was induced by the impact of slow (4 keV/u) Au(69+) projectiles. The intensities of Si(x)O(y)H(z)(+), (x=1-22, y=1-44, z=0-7) clusters are found to depend sensitively on the oxygen to silicon ratio and also on the hydrogen content. We find that oxygen rich clusters, y=2x+1, and, in one case, y=2x+2, can be stabilized by the incorporation of two additional hydrogen atoms in the cluster. (C) 2000 American Institute of Physics. [S0021-9606(00)70630-1].

Original languageEnglish
Article numberPII [S0021-9606(00)70630-1]
Pages (from-to)2419-2422
Number of pages4
JournalJournal of Chemical Physics
Volume113
Issue number6
DOIs
Publication statusPublished - 8-Aug-2000

Keywords

  • MASS-SPECTROMETRY
  • ION EMISSION
  • SLOW
  • SURFACES
  • TIME
  • SIO2

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