Influence of hydrogen on the stability of positively charged silicon dioxide clusters

T. Schenkel, T. Schlatholter, M. W. Newman, G. A. Machicoane, J. W. McDonald, A. V. Hamza

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    Abstract

    Spectra of positively charged secondary ions from thermally grown SiO(2) films were recorded in a time-of-flight secondary ion mass spectrometry scheme. Ablation of cluster ions was induced by the impact of slow (4 keV/u) Au(69+) projectiles. The intensities of Si(x)O(y)H(z)(+), (x=1-22, y=1-44, z=0-7) clusters are found to depend sensitively on the oxygen to silicon ratio and also on the hydrogen content. We find that oxygen rich clusters, y=2x+1, and, in one case, y=2x+2, can be stabilized by the incorporation of two additional hydrogen atoms in the cluster. (C) 2000 American Institute of Physics. [S0021-9606(00)70630-1].

    Original languageEnglish
    Article numberPII [S0021-9606(00)70630-1]
    Pages (from-to)2419-2422
    Number of pages4
    JournalJournal of Chemical Physics
    Volume113
    Issue number6
    DOIs
    Publication statusPublished - 8-Aug-2000

    Keywords

    • MASS-SPECTROMETRY
    • ION EMISSION
    • SLOW
    • SURFACES
    • TIME
    • SIO2

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