TY - JOUR
T1 - Inkjet Printed Single-Walled Carbon Nanotube Based Ambipolar and Unipolar Transistors for High-Performance Complementary Logic Circuits
AU - Bucella, Sadir Gabriele
AU - Salazar-Rios, Jorge Mario
AU - Derenskyi, Vladimir
AU - Fritsch, Martin
AU - Scherf, Ullrich
AU - Loi, Maria Antonietta
AU - Caironi, Mario
PY - 2016/6
Y1 - 2016/6
N2 - Inkjet printed single walled carbon nanotubes (SWCNT) field-effect transistors with mobilities of 15 and 7 cm(2) V-1 s(-1) for holes and electrons, respectively, and high on-off ratio, are demonstrated. The high loading of the ink formulation and high electronic quality of the sorted SWCNT enable facile printing of networks displaying high coverage and effective mobility already after a single printing pass. Balanced ambipolarity or mainly unipolar behavior can be tuned by simply varying the number of printing passes, thus enabling the realization of high-performance complementary-like logic gates.
AB - Inkjet printed single walled carbon nanotubes (SWCNT) field-effect transistors with mobilities of 15 and 7 cm(2) V-1 s(-1) for holes and electrons, respectively, and high on-off ratio, are demonstrated. The high loading of the ink formulation and high electronic quality of the sorted SWCNT enable facile printing of networks displaying high coverage and effective mobility already after a single printing pass. Balanced ambipolarity or mainly unipolar behavior can be tuned by simply varying the number of printing passes, thus enabling the realization of high-performance complementary-like logic gates.
KW - FIELD-EFFECT TRANSISTORS
KW - LARGE-AREA ELECTRONICS
KW - THIN-FILM TRANSISTORS
KW - ORGANIC TRANSISTORS
KW - POLYMER SEMICONDUCTORS
KW - RING OSCILLATORS
KW - MATERIALS DESIGN
KW - N-CHANNEL
KW - DEVICES
KW - DISPERSION
U2 - 10.1002/aelm.201600094
DO - 10.1002/aelm.201600094
M3 - Article
SN - 2199-160X
VL - 2
JO - Advanced electronic materials
JF - Advanced electronic materials
IS - 6
M1 - 1600094
ER -