Interface-controlled, high-mobility organic transistors

Oana D. Jurchescu; Mihaita Popinciuc; Bart J. van Wees; Thomas T. M. Palstra

doi:10.1002/adma.200600929

Interface-controlled, high-mobility organic transistors

Oana D. Jurchescu, Mihaita Popinciuc, Bart J. van Wees, Thomas T. M. Palstra^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

382 Citations (Scopus)

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Abstract

The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

Original language	English
Pages (from-to)	688-+
Number of pages	6
Journal	Advanced materials
Volume	19
Issue number	5
DOIs	https://doi.org/10.1002/adma.200600929
Publication status	Published - 5-Mar-2007

Keywords

FIELD-EFFECT TRANSISTORS
THIN-FILM TRANSISTORS
SINGLE-CRYSTAL
CHARGE INJECTION
ELECTRONIC TRANSPORT
HOLE MOBILITY
PENTACENE
SEMICONDUCTORS

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@article{28a321aef7244a4cb841e7a4b5cd9687,

title = "Interface-controlled, high-mobility organic transistors",

abstract = "The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.",

keywords = "FIELD-EFFECT TRANSISTORS, THIN-FILM TRANSISTORS, SINGLE-CRYSTAL, CHARGE INJECTION, ELECTRONIC TRANSPORT, HOLE MOBILITY, PENTACENE, SEMICONDUCTORS",

author = "Jurchescu, {Oana D.} and Mihaita Popinciuc and {van Wees}, {Bart J.} and Palstra, {Thomas T. M.}",

year = "2007",

month = mar,

day = "5",

doi = "10.1002/adma.200600929",

language = "English",

volume = "19",

pages = "688--+",

journal = "Advanced materials",

issn = "0935-9648",

publisher = "WILEY-V C H VERLAG GMBH",

number = "5",

}

TY - JOUR

T1 - Interface-controlled, high-mobility organic transistors

AU - Jurchescu, Oana D.

AU - Popinciuc, Mihaita

AU - van Wees, Bart J.

AU - Palstra, Thomas T. M.

PY - 2007/3/5

Y1 - 2007/3/5

N2 - The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

AB - The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

KW - FIELD-EFFECT TRANSISTORS

KW - THIN-FILM TRANSISTORS

KW - SINGLE-CRYSTAL

KW - CHARGE INJECTION

KW - ELECTRONIC TRANSPORT

KW - HOLE MOBILITY

KW - PENTACENE

KW - SEMICONDUCTORS

U2 - 10.1002/adma.200600929

DO - 10.1002/adma.200600929

M3 - Article

SN - 0935-9648

VL - 19

SP - 688-+

JO - Advanced materials

JF - Advanced materials

IS - 5

ER -

Interface-controlled, high-mobility organic transistors

Abstract

Keywords

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