Interface roughness effects in the giant magnetoresistance in magnetic multilayers

J. Barnaś, G. Palasantzas

Research output: Contribution to journalArticleAcademic

36 Citations (Scopus)
252 Downloads (Pure)

Abstract

In-plane electronic transport in thin layered magnetic structures composed of two ferromagnetic films separated by a nonmagnetic spacer is analyzed theoretically in the Born approximation. Particular attention is paid to the role of interface roughness in the giant magnetoresistance (GMR) effect. The analysis applies to self-affine interfaces described by the k-correlation model. Our results show that GMR is sensitive to the roughness exponent H (0≤H≤1) in a manner that depends on spin asymmetries for bulk and interfacial scattering. The limit of low electron concentration is also considered.
Original languageEnglish
Pages (from-to)3950-3956
Number of pages7
JournalJournal of Applied Physics
Volume82
Issue number8
DOIs
Publication statusPublished - 15-Oct-1997

Keywords

  • SPIN-DEPENDENT SCATTERING
  • FE/CR SUPERLATTICES
  • METALLIC MULTILAYERS
  • LAYERED STRUCTURES
  • TRANSPORT
  • CONDUCTIVITY
  • LIMIT
  • MICROSCOPY
  • PARALLEL

Cite this