Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf0.5Zr0.5O2-Based Capacitors Through Operando Nanobeam X-Ray Diffraction

Evgenios Stylianidis, Pranav Surabhi, Ruben Hamming-Green, Mart Salverda, Yingfen Wei, Arjan Burema, Sylvia Matzen, Tamalika Banerjee, Alexander Björling, Binayak Mukherjee, Sangita Dutta, Hugo Aramberri, Jorge Íñiguez, Beatriz Noheda, Dina Carbone*, Pavan Nukala*

*Corresponding author for this work

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Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future nonvolatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial La0.67Sr0.33MnO3/Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 ferroelectric capacitors is investigated, via the sensitivity offered by nanobeam X-ray diffraction experiments during application of electrical bias. It is shown that the pristine rhombohedral phase exhibits a linear piezoelectric effect with piezoelectric coefficient (|d33|) ≈ 0.5–0.8 pmV−1. It is found that the piezoelectric response is suppressed above the coercive voltage. For higher voltages, and with the onset of DC conductivity throughout the capacitor, a second-order effect is observed. The work sheds light into the electromechanical response of rhombohedral Hf0.5Zr0.5O2 and suggests its (un)correlation with ferroelectric switching.

Original languageEnglish
Article number2201298
Number of pages7
JournalAdvanced electronic materials
Issue number6
Publication statusPublished - Jun-2023


  • electrochemical polarization
  • first-principles
  • nanobeam diffraction
  • rhombohedral Hf Zr O

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