Lattice sites of ion-implanted Li in diamond

M. Restle; K. Bharuth-Ram; H. Quintel; C. R. Ronning; H. C. Hofsäss; S. G. Jahn; U. Wahl

doi:10.1063/1.113691

Lattice sites of ion-implanted Li in diamond

M. Restle
, K. Bharuth-Ram
, H. Quintel
, C. R. Ronning
, H. C. Hofsäss
, S. G. Jahn
, U. Wahl

Kapteyn Astronomical Institute

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Radioactive Li ions were implanted into natural IIa diamonds at temperatures between 100 and 900 K. Emission channeling patterns of α‐particles emitted in the nuclear decay of 8Li(t1/2=838 ms) were measured and, from a comparison with calculated emission channeling and blocking effects from Monte Carlo simulations, the lattice sites taken up by the Li ions were quantitatively determined. A fraction of 40(5)% of the implanted Li ions were found to be located on tetrahedral interstitial lattice sites, and 17(5)% on substitutional sites. The fractions of implanted Li on the two lattice sites showed no change with temperature, indicating that Li diffusion does not take place within the time window of our measurements.

Original language	English
Pages (from-to)	2733-2735
Number of pages	3
Journal	Applied Physics Letters
Volume	66
Issue number	20
DOIs	https://doi.org/10.1063/1.113691
Publication status	Published - 15-May-1995

Keywords

CONDUCTION
DOPANTS

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10.1063/1.113691

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title = "Lattice sites of ion-implanted Li in diamond",

abstract = "Radioactive Li ions were implanted into natural IIa diamonds at temperatures between 100 and 900 K. Emission channeling patterns of α‐particles emitted in the nuclear decay of 8Li(t1/2=838 ms) were measured and, from a comparison with calculated emission channeling and blocking effects from Monte Carlo simulations, the lattice sites taken up by the Li ions were quantitatively determined. A fraction of 40(5)\% of the implanted Li ions were found to be located on tetrahedral interstitial lattice sites, and 17(5)\% on substitutional sites. The fractions of implanted Li on the two lattice sites showed no change with temperature, indicating that Li diffusion does not take place within the time window of our measurements.",

keywords = "CONDUCTION, DOPANTS",

author = "M. Restle and K. Bharuth-Ram and H. Quintel and Ronning, \{C. R.\} and Hofs{\"a}ss, \{H. C.\} and Jahn, \{S. G.\} and U. Wahl",

note = "Relation: http://www.rug.nl/ date\_submitted:2006 Rights: University of Groningen",

year = "1995",

month = may,

day = "15",

doi = "10.1063/1.113691",

language = "English",

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pages = "2733--2735",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "20",

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TY - JOUR

T1 - Lattice sites of ion-implanted Li in diamond

AU - Restle, M.

AU - Bharuth-Ram, K.

AU - Quintel, H.

AU - Ronning, C. R.

AU - Hofsäss, H. C.

AU - Jahn, S. G.

AU - Wahl, U.

N1 - Relation: http://www.rug.nl/ date_submitted:2006 Rights: University of Groningen

PY - 1995/5/15

Y1 - 1995/5/15

N2 - Radioactive Li ions were implanted into natural IIa diamonds at temperatures between 100 and 900 K. Emission channeling patterns of α‐particles emitted in the nuclear decay of 8Li(t1/2=838 ms) were measured and, from a comparison with calculated emission channeling and blocking effects from Monte Carlo simulations, the lattice sites taken up by the Li ions were quantitatively determined. A fraction of 40(5)% of the implanted Li ions were found to be located on tetrahedral interstitial lattice sites, and 17(5)% on substitutional sites. The fractions of implanted Li on the two lattice sites showed no change with temperature, indicating that Li diffusion does not take place within the time window of our measurements.

AB - Radioactive Li ions were implanted into natural IIa diamonds at temperatures between 100 and 900 K. Emission channeling patterns of α‐particles emitted in the nuclear decay of 8Li(t1/2=838 ms) were measured and, from a comparison with calculated emission channeling and blocking effects from Monte Carlo simulations, the lattice sites taken up by the Li ions were quantitatively determined. A fraction of 40(5)% of the implanted Li ions were found to be located on tetrahedral interstitial lattice sites, and 17(5)% on substitutional sites. The fractions of implanted Li on the two lattice sites showed no change with temperature, indicating that Li diffusion does not take place within the time window of our measurements.

KW - CONDUCTION

KW - DOPANTS

U2 - 10.1063/1.113691

DO - 10.1063/1.113691

M3 - Article

SN - 0003-6951

VL - 66

SP - 2733

EP - 2735

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Lattice sites of ion-implanted Li in diamond

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