Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

Thomas Maassen*, J. Jasper van den Berg, Natasja IJbema, Felix Fromm, Thomas Seyller, Rositza Yakimova, Bart J. van Wees

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau(s) in monolayer graphene, while the spin diffusion coefficient D-s is strongly reduced compared to typical results on exfoliated graphene. The increase of tau(s) is probably related to the changed substrate, while the cause for the small value of D-s remains an open question.

Original languageEnglish
Pages (from-to)1498-1502
Number of pages5
JournalNano Letters
Volume12
Issue number3
DOIs
Publication statusPublished - Mar-2012

Keywords

  • Spin transport
  • Hanle precession
  • graphene
  • epitaxial growth
  • SILICON-CARBIDE
  • LAYERS

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