Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers

Yingfen Wei; Sylvia Matzen; Thomas Maroutian; Guillaume Agnus; Mart Salverda; Pavan Nukala; Qihong Chen; Jianting Ye; Philippe Lecoeur; Beatriz Noheda

doi:10.1103/PhysRevApplied.12.031001

Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers

Yingfen Wei, Sylvia Matzen^*, Thomas Maroutian, Guillaume Agnus, Mart Salverda, Pavan Nukala, Qihong Chen, Jianting Ye, Philippe Lecoeur, Beatriz Noheda

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Ferroelectric tunnel barriers in between two ferromagnetic electrodes (multiferroic tunnel junctions, or MFTJs) hold great promise for future microelectronic devices. Here, we utilize Hf0.5Zr0.5O2 (HZO) tunnel barriers with an ultralow thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 ferromagnetic bottom electrodes and with cobalt top electrodes. Both tunneling electroresistance and tunneling magnetoresistance effects are observed, demonstrating four nonvolatile resistance states in HZO-based junctions. The large band gap and excellent homogeneity of the HZO tunnel barriers enable a high yield of working devices, as well as devices with sizes of tens of micrometers. This allows working with fixed electrodes, as opposed to the use of scanning probes, bringing MFTJs closer to applications.

Original language	English
Article number	031001
Number of pages	6
Journal	Physical Review Applied
Volume	12
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevApplied.12.031001
Publication status	Published - 6-Sept-2019

Keywords

SPIN POLARIZATION
ELECTRORESISTANCE
MAGNETORESISTANCE

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10.1103/PhysRevApplied.12.031001

Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2Tunnel BarriersFinal publisher's version, 1.25 MBLicence: Unspecified

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title = "Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers",

abstract = "Ferroelectric tunnel barriers in between two ferromagnetic electrodes (multiferroic tunnel junctions, or MFTJs) hold great promise for future microelectronic devices. Here, we utilize Hf0.5Zr0.5O2 (HZO) tunnel barriers with an ultralow thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 ferromagnetic bottom electrodes and with cobalt top electrodes. Both tunneling electroresistance and tunneling magnetoresistance effects are observed, demonstrating four nonvolatile resistance states in HZO-based junctions. The large band gap and excellent homogeneity of the HZO tunnel barriers enable a high yield of working devices, as well as devices with sizes of tens of micrometers. This allows working with fixed electrodes, as opposed to the use of scanning probes, bringing MFTJs closer to applications.",

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author = "Yingfen Wei and Sylvia Matzen and Thomas Maroutian and Guillaume Agnus and Mart Salverda and Pavan Nukala and Qihong Chen and Jianting Ye and Philippe Lecoeur and Beatriz Noheda",

year = "2019",

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doi = "10.1103/PhysRevApplied.12.031001",

language = "English",

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AU - Wei, Yingfen

AU - Matzen, Sylvia

AU - Maroutian, Thomas

AU - Agnus, Guillaume

AU - Salverda, Mart

AU - Nukala, Pavan

AU - Chen, Qihong

AU - Ye, Jianting

AU - Lecoeur, Philippe

AU - Noheda, Beatriz

PY - 2019/9/6

Y1 - 2019/9/6

N2 - Ferroelectric tunnel barriers in between two ferromagnetic electrodes (multiferroic tunnel junctions, or MFTJs) hold great promise for future microelectronic devices. Here, we utilize Hf0.5Zr0.5O2 (HZO) tunnel barriers with an ultralow thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 ferromagnetic bottom electrodes and with cobalt top electrodes. Both tunneling electroresistance and tunneling magnetoresistance effects are observed, demonstrating four nonvolatile resistance states in HZO-based junctions. The large band gap and excellent homogeneity of the HZO tunnel barriers enable a high yield of working devices, as well as devices with sizes of tens of micrometers. This allows working with fixed electrodes, as opposed to the use of scanning probes, bringing MFTJs closer to applications.

AB - Ferroelectric tunnel barriers in between two ferromagnetic electrodes (multiferroic tunnel junctions, or MFTJs) hold great promise for future microelectronic devices. Here, we utilize Hf0.5Zr0.5O2 (HZO) tunnel barriers with an ultralow thickness of only 2 nm, epitaxially grown on La0.7Sr0.3MnO3 ferromagnetic bottom electrodes and with cobalt top electrodes. Both tunneling electroresistance and tunneling magnetoresistance effects are observed, demonstrating four nonvolatile resistance states in HZO-based junctions. The large band gap and excellent homogeneity of the HZO tunnel barriers enable a high yield of working devices, as well as devices with sizes of tens of micrometers. This allows working with fixed electrodes, as opposed to the use of scanning probes, bringing MFTJs closer to applications.

KW - SPIN POLARIZATION

KW - ELECTRORESISTANCE

KW - MAGNETORESISTANCE

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