Memory retention of doped SbTe phase change line cells measured isothermally and isochronally

J. L.M. Oosthoek*, B. J. Kooi, K. Attenborough, G. A.M. Hurkx, D. J. Gravesteijn

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Doped SbTe phase change (PRAM) line cells produced by e-beam lithography were cycled for at least 100 million times. The memory retention of the PRAM cell was measured both isothermally and isochronally which showed excellent agreement. An activation energy for growth of 1.7 eV was found (after 100 million cycles) for both measurements. Similar isothermal and isochronal measurements were performed on PRAM cells produced by optical lithography which yielded activation energies of 3.0 eV and 3.3 eV, respectively. Our results show that the same phase-change material can show large differences in retention behavior depending on the way the cells are produced.

Original languageEnglish
Title of host publicationMaterials and Physics for Nonvolatile Memories II
PublisherMaterials Research Society
Pages177-182
Number of pages6
ISBN (Print)9781605112237
DOIs
Publication statusPublished - 1-Aug-2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1250
ISSN (Print)0272-9172

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