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MICROSCOPIC THEORY OF SUPERCONDUCTING CONTACTS WITH INSULATING BARRIERS

  • AF VOLKOV*
  • , TM KLAPWIJK
  • *Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    49 Citations (Scopus)

    Abstract

    We analyze contacts like SININ and SINIS with dielectric barriers I. On the basis of a microscopic theory, we obtain the matching conditions at the SIN boundary for the distribution functions. The I(V) characteristics are found for the SININ contacts with a length exceeding the correlation length-xi. It is shown that in contacts with a high transmittance of the SIN interface an excess current I(exc) > 0 appears at high voltages. In contacts with a low transmittance a deficit current I(def) <0 at high V and a peak in the conductance at low V exist. Both I(exc) and I(def) diminish with increasing the contact length d. The zero-bias anomaly is suppressed by temperature and a weak magnetic field.

    Original languageEnglish
    Pages (from-to)217-224
    Number of pages8
    JournalPhysics Letters A
    Volume168
    Issue number3
    Publication statusPublished - 24-Aug-1992

    Keywords

    • ENERGY-GAP STRUCTURE
    • EXCESS CURRENT
    • CONSTRICTIONS

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