Abstract
We analyze contacts like SININ and SINIS with dielectric barriers I. On the basis of a microscopic theory, we obtain the matching conditions at the SIN boundary for the distribution functions. The I(V) characteristics are found for the SININ contacts with a length exceeding the correlation length-xi. It is shown that in contacts with a high transmittance of the SIN interface an excess current I(exc) > 0 appears at high voltages. In contacts with a low transmittance a deficit current I(def) <0 at high V and a peak in the conductance at low V exist. Both I(exc) and I(def) diminish with increasing the contact length d. The zero-bias anomaly is suppressed by temperature and a weak magnetic field.
| Original language | English |
|---|---|
| Pages (from-to) | 217-224 |
| Number of pages | 8 |
| Journal | Physics Letters A |
| Volume | 168 |
| Issue number | 3 |
| Publication status | Published - 24-Aug-1992 |
Keywords
- ENERGY-GAP STRUCTURE
- EXCESS CURRENT
- CONSTRICTIONS
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