Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes

Haidong Lu, Bo Wang, Tao Li, Alexey Lipatov, Hyungwoo Lee, Anil Rajapitamahuni, Ruijuan Xu, Xia Hong, Saeedeh Farokhipoor, Lane W. Martin, Chang-Beom Eom, Long-Qing Chen, Alexander Sinitskii, Alexei Gruyerman*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)

Abstract

Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.
Original languageEnglish
Pages (from-to)6460-6466
Number of pages7
JournalNano Letters
Volume16
Issue number10
DOIs
Publication statusPublished - Oct-2016

Keywords

  • Flexoelectric switching
  • graphene
  • domain engineering
  • ferroelectric films
  • PIEZORESPONSE FORCE MICROSCOPY
  • BATIO3 THIN-FILMS
  • TUNNEL-JUNCTIONS
  • DOMAIN-WALLS
  • NANOSCALE
  • CONDUCTION
  • THICKNESS
  • MEMRISTOR
  • STABILITY
  • EVOLUTION

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