Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfaces

S. Parui; J.R.R. van der Ploeg; K.G. Rana; T. Banerjee

doi:10.1002/pssr.201105401

Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfaces

S. Parui, J.R.R. van der Ploeg, K.G. Rana, T. Banerjee^*

^*Corresponding author for this work

Zernike Institute for Advanced Materials

Research output: Contribution to journal › Article › Academic › peer-review

10 Citations (Scopus)

Abstract

Ballistic electron emission microscopy (BEEM) has been used to investigate hot electron transmission, at the nanoscale, in thin films of Cu on Si(100) and Si(111). For all Cu thicknesses studied here, the BEEM transmission is observed to be twice larger for Si(111) than for Si(100). Further, the attenuation length in Cu is found to be larger for Si(111) than for Si(100) substrates, in spite of the highly textured growth of Cu on both the substrates. Our results can be explained by the incorporation of elastic scattering at the metal-semiconductor (M/S) interface as well as the increased availability of parallel momentum states at the interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original language	English
Pages (from-to)	388-390
Number of pages	3
Journal	Physica status solidi-Rapid research letters
Volume	5
Issue number	10-11
DOIs	https://doi.org/10.1002/pssr.201105401
Publication status	Published - Nov-2011

Keywords

ballistic electron emission microscopy
hot electron transport
Schottky barrier height
thin films
METAL-SEMICONDUCTOR INTERFACES
EMISSION-MICROSCOPY
FILMS
SCATTERING
RESOLUTION
SURFACES
SI(100)
SI(111)
GROWTH
SI

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Nanoscale hot electron transport across Cu-n-Si(100) and Cu-n-Si(111)
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@article{da12ddfde04f4bba9ee95cab5ac25e8e,

title = "Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfaces",

abstract = "Ballistic electron emission microscopy (BEEM) has been used to investigate hot electron transmission, at the nanoscale, in thin films of Cu on Si(100) and Si(111). For all Cu thicknesses studied here, the BEEM transmission is observed to be twice larger for Si(111) than for Si(100). Further, the attenuation length in Cu is found to be larger for Si(111) than for Si(100) substrates, in spite of the highly textured growth of Cu on both the substrates. Our results can be explained by the incorporation of elastic scattering at the metal-semiconductor (M/S) interface as well as the increased availability of parallel momentum states at the interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

keywords = "ballistic electron emission microscopy, hot electron transport, Schottky barrier height, thin films, METAL-SEMICONDUCTOR INTERFACES, EMISSION-MICROSCOPY, FILMS, SCATTERING, RESOLUTION, SURFACES, SI(100), SI(111), GROWTH, SI",

author = "S. Parui and Ploeg, {J.R.R. van der} and K.G. Rana and T. Banerjee",

note = "Relation: http://onlinelibrary.wiley.com/",

year = "2011",

month = nov,

doi = "10.1002/pssr.201105401",

language = "English",

volume = "5",

pages = "388--390",

journal = "Physica status solidi-Rapid research letters",

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TY - JOUR

T1 - Nanoscale hot electron transport across Cu/n-Si(100) and Cu/n-Si(111) interfaces

AU - Parui, S.

AU - Ploeg, J.R.R. van der

AU - Rana, K.G.

AU - Banerjee, T.

N1 - Relation: http://onlinelibrary.wiley.com/

PY - 2011/11

Y1 - 2011/11

N2 - Ballistic electron emission microscopy (BEEM) has been used to investigate hot electron transmission, at the nanoscale, in thin films of Cu on Si(100) and Si(111). For all Cu thicknesses studied here, the BEEM transmission is observed to be twice larger for Si(111) than for Si(100). Further, the attenuation length in Cu is found to be larger for Si(111) than for Si(100) substrates, in spite of the highly textured growth of Cu on both the substrates. Our results can be explained by the incorporation of elastic scattering at the metal-semiconductor (M/S) interface as well as the increased availability of parallel momentum states at the interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

AB - Ballistic electron emission microscopy (BEEM) has been used to investigate hot electron transmission, at the nanoscale, in thin films of Cu on Si(100) and Si(111). For all Cu thicknesses studied here, the BEEM transmission is observed to be twice larger for Si(111) than for Si(100). Further, the attenuation length in Cu is found to be larger for Si(111) than for Si(100) substrates, in spite of the highly textured growth of Cu on both the substrates. Our results can be explained by the incorporation of elastic scattering at the metal-semiconductor (M/S) interface as well as the increased availability of parallel momentum states at the interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

KW - ballistic electron emission microscopy

KW - hot electron transport

KW - Schottky barrier height

KW - thin films

KW - METAL-SEMICONDUCTOR INTERFACES

KW - EMISSION-MICROSCOPY

KW - FILMS

KW - SCATTERING

KW - RESOLUTION

KW - SURFACES

KW - SI(100)

KW - SI(111)

KW - GROWTH

KW - SI

U2 - 10.1002/pssr.201105401

DO - 10.1002/pssr.201105401

M3 - Article

SN - 1862-6270

VL - 5

SP - 388

EP - 390

JO - Physica status solidi-Rapid research letters

JF - Physica status solidi-Rapid research letters

IS - 10-11

ER -