New spintronic devices through diluted magnetic semiconductors and magnetic insulators

This research explores advancements in spintronics as a solution to challenges faced by the ongoing miniaturization of electronic components in integrated circuits, which has led to issues such as leakage currents and high operating temperatures. The study focuses on two promising materials for spintronic applications: diluted magnetic semiconductors (DMS) and magnetic insulators.
The thesis delves into the properties of GaN-based DMS, a material with the potential to integrate spintronics with existing semiconductor technologies. Chapter 4 investigates the origin of ferromagnetism in GaN doped with transition metals, finding that specific defects, such as VGa-ON complexes, facilitate a ferromagnetic superexchange mechanism. Chapter 5 pioneers the study of spin properties in GaN-based DMS devices, demonstrating significant advancements in interface transparency and spin mixing conductance, comparable to state-of-the-art materials like yttrium iron garnet (YIG).
The research also explores magnetic insulators, particularly YIG, which is vital for the fields of magnonics and orbitronics. Chapter 6 showcases the use of orbital-related processes to enhance magnon transport in YIG-based devices, achieving a tenfold increase in magnon signal and advancing the understanding of charge-to-orbital interconversion. These findings contribute to the development of more efficient spintronic devices, broadening the scope of materials and technologies in the field.