On erbium lattice location in ion implanted Si0.75Ge0.25 alloy: Computer simulation of Rutherford backscattering/channeling

V.  Touboltsev; P. Jalkanen; J. Räisänen; P. J. M. Smulders

doi:10.1063/1.1555269

On erbium lattice location in ion implanted Si0.75Ge0.25 alloy: Computer simulation of Rutherford backscattering/channeling

V. Touboltsev, P. Jalkanen, J. Räisänen, P. J. M. Smulders

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Abstract

A high crystalline quality Si0.75Ge0.25 alloy layer grown by chemical vapor deposition was implanted with 70 keV Er+ ions to a fluence of 10(15) cm(-2) at temperature of 550 degreesC. The implantation was found to result in an Er depth distribution with 1 at. % maximum concentration 30 nm beneath the surface. The location of the erbium atoms in the host matrix lattice is derived through computer simulation of experimental axial channeling angular scans measured by in situ Rutherford backscattering/channeling spectrometry. Using computer code FLUX 7.7 it is shown that 60% of the implanted erbium atoms are located at ytterbium sites, 10% at tetrahedral sites, and the remainder are associated with random locations in the host matrix.

Original language	English
Pages (from-to)	3668-3670
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1555269
Publication status	Published - 15-Mar-2003

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abstract = "A high crystalline quality Si0.75Ge0.25 alloy layer grown by chemical vapor deposition was implanted with 70 keV Er+ ions to a fluence of 10(15) cm(-2) at temperature of 550 degreesC. The implantation was found to result in an Er depth distribution with 1 at. % maximum concentration 30 nm beneath the surface. The location of the erbium atoms in the host matrix lattice is derived through computer simulation of experimental axial channeling angular scans measured by in situ Rutherford backscattering/channeling spectrometry. Using computer code FLUX 7.7 it is shown that 60% of the implanted erbium atoms are located at ytterbium sites, 10% at tetrahedral sites, and the remainder are associated with random locations in the host matrix. ",

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T1 - On erbium lattice location in ion implanted Si0.75Ge0.25 alloy

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AU - Touboltsev, V.

AU - Jalkanen, P.

AU - Räisänen, J.

AU - Smulders, P. J. M.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - A high crystalline quality Si0.75Ge0.25 alloy layer grown by chemical vapor deposition was implanted with 70 keV Er+ ions to a fluence of 10(15) cm(-2) at temperature of 550 degreesC. The implantation was found to result in an Er depth distribution with 1 at. % maximum concentration 30 nm beneath the surface. The location of the erbium atoms in the host matrix lattice is derived through computer simulation of experimental axial channeling angular scans measured by in situ Rutherford backscattering/channeling spectrometry. Using computer code FLUX 7.7 it is shown that 60% of the implanted erbium atoms are located at ytterbium sites, 10% at tetrahedral sites, and the remainder are associated with random locations in the host matrix.

AB - A high crystalline quality Si0.75Ge0.25 alloy layer grown by chemical vapor deposition was implanted with 70 keV Er+ ions to a fluence of 10(15) cm(-2) at temperature of 550 degreesC. The implantation was found to result in an Er depth distribution with 1 at. % maximum concentration 30 nm beneath the surface. The location of the erbium atoms in the host matrix lattice is derived through computer simulation of experimental axial channeling angular scans measured by in situ Rutherford backscattering/channeling spectrometry. Using computer code FLUX 7.7 it is shown that 60% of the implanted erbium atoms are located at ytterbium sites, 10% at tetrahedral sites, and the remainder are associated with random locations in the host matrix.

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DO - 10.1063/1.1555269

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JF - Journal of Applied Physics

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ER -

On erbium lattice location in ion implanted Si0.75Ge0.25 alloy: Computer simulation of Rutherford backscattering/channeling

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