On the construction of an Fe3O4-based all-oxide spin valve

P. J. van der Zaag*, P. J. H. Bloemen, J. M. Gaines, R. M. Wolf, P. A. A. van der Heijden, R. J. M. van de Veerdonk, W. J. M. de Jonge

*Corresponding author for this work

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The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4 is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.
Original languageEnglish
Pages (from-to)301-308
Number of pages8
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
Publication statusPublished - 2000
Externally publishedYes

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