On the construction of an Fe3O4-based all-oxide spin valve

P. J. van der Zaag; P. J. H. Bloemen; J. M. Gaines; R. M. Wolf; P. A. A. van der Heijden; R. J. M. van de Veerdonk; W. J. M.  de Jonge

doi:10.1016/S0304-8853(99)00751-9

On the construction of an Fe3O4-based all-oxide spin valve

P. J. van der Zaag^*, P. J. H. Bloemen, J. M. Gaines, R. M. Wolf, P. A. A. van der Heijden, R. J. M. van de Veerdonk, W. J. M. de Jonge

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

128 Citations (Scopus)

Abstract

The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4 is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.

Original language	English
Pages (from-to)	301-308
Number of pages	8
Journal	Journal of Magnetism and Magnetic Materials
Volume	211
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(99)00751-9
Publication status	Published - 2000
Externally published	Yes

Access to Document

10.1016/S0304-8853(99)00751-9

Handle.net

Persistent link

Embargoed Document

On the construction of an Fe3O4-based all-oxide spin valve
Final publisher's version, 201 KB
Request copy

Cite this

@article{20f6717c62264a309ecddf40ea0c3c1e,

title = "On the construction of an Fe3O4-based all-oxide spin valve",

abstract = "The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4 is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.",

author = "{van der Zaag}, {P. J.} and Bloemen, {P. J. H.} and Gaines, {J. M.} and Wolf, {R. M.} and {van der Heijden}, {P. A. A.} and {van de Veerdonk}, {R. J. M.} and {de Jonge}, {W. J. M.}",

year = "2000",

doi = "10.1016/S0304-8853(99)00751-9",

language = "English",

volume = "211",

pages = "301--308",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

number = "1-3",

}

TY - JOUR

T1 - On the construction of an Fe3O4-based all-oxide spin valve

AU - van der Zaag, P. J.

AU - Bloemen, P. J. H.

AU - Gaines, J. M.

AU - Wolf, R. M.

AU - van der Heijden, P. A. A.

AU - van de Veerdonk, R. J. M.

AU - de Jonge, W. J. M.

PY - 2000

Y1 - 2000

N2 - The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4 is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.

AB - The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4 is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect ⩽0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed.

U2 - 10.1016/S0304-8853(99)00751-9

DO - 10.1016/S0304-8853(99)00751-9

M3 - Article

SN - 0304-8853

VL - 211

SP - 301

EP - 308

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

ER -