Patterned Quantum Dot Photosensitive FETs for Medium Frequency Optoelectronics

Artem G. Shulga, Akifumi Yamamura, Kotaro Tsuzuku, Ryan M. Dragoman, Dmitry N. Dirin, Shun Watanabe, Maksym Kovalenko, Jun Takeya, Maria A. Loi*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The use of colloidal quantum dots (CQDs) as active layers for the transistors in integrated circuits is often impeded by the poor compatibility of CQDs films with the standard lithographic processing. Successful patterning of tetrabutylammonium iodide-treated PbS CQDs films is demonstrated on (3-aminopropyl)triethoxysilane (APTES) functionalized glass or aluminum oxide surfaces, using lithography. Short-channel (4 mu m) field-effect transistors (FETs) with patterned gate electrode and patterned CQDs film as active layer with electron mobility of 0.1 cm(2) V-1 s(-1), threshold voltage of -0.29 V, and cutoff frequency of 400 kHz are demonstrated. Furthermore, the lithographic processing does not compromise the optical properties of the film, as evidenced by the photoresponse measurements of the FETs (11.6 mA W-1 at 920 nm and 26.7 mA W-1 at 440 nm). These results further demonstrate CQDs as a potential material for optoelectronic applications, where medium frequency operation is required.

Original languageEnglish
Article number1900054
Number of pages6
JournalAdvanced materials technologies
Volume4
Issue number9
DOIs
Publication statusPublished - Sep-2019

Keywords

  • cutoff-frequency
  • field-effect transistors
  • photodetection
  • quantum dots
  • NEAR-INFRARED LIGHT
  • SOLAR-CELLS
  • PHOTODETECTORS

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