Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation

Ramanathaswamy Pandian*, Bart J. Kooi, Jasper L. M. Oosthoek, Pim van den Dool, George Palasantzas, Andrew Pauza

*Corresponding author for this work

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Abstract

We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with both continuous and pulsed dc voltages less than 1.5 V. Low and high resistance states of this switching can be attributed to formation and rupture, respectively, of electrically conductive Sb-bridges between the Ge(2)Sb(2)Te(5) crystals and electrodes through the resistive amorphous phase. The coexistence of polarity-dependent resistance switching with amorphous-crystalline phase-changes renders great opportunities to expand the applicability of GeSbTe films for data storage applications. (C) 2009 American Institute of Physics. [doi:10.1063/1.3276272]

Original languageEnglish
Article number252109
Pages (from-to)252109-1-252109-3
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number25
DOIs
Publication statusPublished - 21-Dec-2009

Keywords

  • RANDOM-ACCESS MEMORY
  • CHALCOGENIDE GLASSES
  • IONIC-CONDUCTIVITY
  • ELECTROLYTES
  • TRANSITION
  • STORAGE
  • METAL

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