Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

R. Jansen; T. Banerjee; B. G. Park; J. C. Lodder

doi:10.1063/1.2737128

Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

R. Jansen, T. Banerjee, B. G. Park, J. C. Lodder

Zernike Institute for Advanced Materials

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Abstract

The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers.

Original language	English
Pages (from-to)	192503-1-192503-3
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	19
DOIs	https://doi.org/10.1063/1.2737128
Publication status	Published - 7-May-2007

Keywords

magnetoelectronics
tunnel transistors
hot electron transistors
scanning tunnelling microscopy
magnetic tunnelling
ferromagnetic materials
cobalt
ROOM-TEMPERATURE
LARGE MAGNETORESISTANCE
SPIN
TRANSPORT
TRANSISTOR
MICROSCOPY
DEPENDENCE
INJECTION

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title = "Probing momentum distributions in magnetic tunnel junctions via hot-electron decay",

abstract = "The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers.",

keywords = "magnetoelectronics, tunnel transistors, hot electron transistors, scanning tunnelling microscopy, magnetic tunnelling, ferromagnetic materials, cobalt, ROOM-TEMPERATURE, LARGE MAGNETORESISTANCE, SPIN, TRANSPORT, TRANSISTOR, MICROSCOPY, DEPENDENCE, INJECTION",

author = "R. Jansen and T. Banerjee and Park, {B. G.} and Lodder, {J. C.}",

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AU - Jansen, R.

AU - Banerjee, T.

AU - Park, B. G.

AU - Lodder, J. C.

N1 - Relation: http://www.rug.nl/zernike/ Rights: University of Groningen, Zernike Institute for Advanced Materials

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N2 - The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers.

AB - The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers.

KW - magnetoelectronics

KW - tunnel transistors

KW - hot electron transistors

KW - scanning tunnelling microscopy

KW - magnetic tunnelling

KW - ferromagnetic materials

KW - cobalt

KW - ROOM-TEMPERATURE

KW - LARGE MAGNETORESISTANCE

KW - SPIN

KW - TRANSPORT

KW - TRANSISTOR

KW - MICROSCOPY

KW - DEPENDENCE

KW - INJECTION

U2 - 10.1063/1.2737128

DO - 10.1063/1.2737128

M3 - Article

SN - 0003-6951

VL - 90

SP - 192503-1-192503-3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

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Keywords

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