PROMOTION OF THE SI(100)-O2 REACTION BY SM

J ONSGAARD*, J GHIJSEN, RL JOHNSON, M CHRISTIANSEN, F ORSKOV, PJ GODOWSKI

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    It is demonstrated that ultrathin and thin films of Sm on Si (001) strongly promote the oxidation of Si. Photoemission measurements of the Si 2p core electrons show binding-energy shifts characteristic of Si2O3 and SiO2. The oxygen binding is conditioned by the presence of Sm, which is also oxidized. Reflection electron-energy-loss spectra and valence-band photoemission data indicate formation of an insulator with a valence-band maximum 4 eV below the Fermi level. The influences of samarium coverages, in the 1-20-monolayer regime, and of the temperature on the reaction are studied.

    Original languageEnglish
    Pages (from-to)4216-4223
    Number of pages8
    JournalPhysical Review. B: Condensed Matter and Materials Physics
    Volume43
    Issue number5
    Publication statusPublished - 15-Feb-1991

    Keywords

    • RARE-EARTH-METALS
    • INTERFACE FORMATION
    • COMPOUND FORMATION
    • MIXED-VALENCE
    • OXIDATION
    • SURFACES
    • PHOTOEMISSION
    • SILICON
    • OVERLAYERS
    • ADSORPTION

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