@inproceedings{be6c489b94bc4d64af874f284d63e97a,
title = "Pulsed laser deposition and characterization of Nb doped PZT thin films",
abstract = "A first attempt to growth thin films of Nb doped PZT with 96% of Zr by pulsed laser deposition (PLD) has been done on Pt-sputtered Si (100) single crystal substrates. The target [1.5% Nb doped Pb(Zr0.965Ti0.035)O3] has been ablated in oxygen atmosphere with a focused KrF excimer laser beam. By changing the laser repetition rate and the deposition time, the thickness of the films was selected in the 150-400 nm range. The lead deficiency of the film was reduced by using an oxygen pressure of 75 mTorr as well as by holding the substrates at temperatures not higher than 500°C. The results of the characterization show that a first (150-180 nm) layer is the main responsible of the lead deficiency, the low resistivity and the lack of ferroelectric response of the films grown.",
author = "B. Noheda and J. Rubio and Gonzalo, {J. A.} and C. Zaldo",
note = "Publisher Copyright: {\textcopyright} 1994 SPIE. All rights reserved.; 2nd International Conference on Thin Film Physics and Applications 1994 ; Conference date: 15-04-1994 Through 17-04-1994",
year = "1994",
month = oct,
day = "26",
doi = "10.1117/12.190796",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
pages = "435--440",
booktitle = "Second International Conference on Thin Film Physics and Applications",
}