Quantum Dot Light-Emitting Transistors-Powerful Research Tools and Their Future Applications

Simon Kahmann, Artem Shulga, Maria A. Loi*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

11 Citations (Scopus)
58 Downloads (Pure)

Abstract

In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.

Original languageEnglish
Article number1904174
Number of pages15
JournalAdvanced Functional Materials
Volume30
Issue number20
Early online date1-Aug-2019
DOIs
Publication statusPublished - 15-May-2020

Keywords

  • colloidal quantum dots
  • field-effect transistors
  • light emission
  • spectroscopy
  • WALLED CARBON NANOTUBES
  • COLLOIDAL NANOCRYSTALS
  • CHARGE-TRANSPORT
  • OPTOELECTRONIC PROPERTIES
  • AMBIPOLAR TRANSPORT
  • RECOMBINATION ZONE
  • SOLAR-CELLS
  • THIN-FILMS
  • TEMPERATURE
  • BRIGHT

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