Abstract
In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.
Original language | English |
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Article number | 1904174 |
Number of pages | 15 |
Journal | Advanced Functional Materials |
Volume | 30 |
Issue number | 20 |
Early online date | 1-Aug-2019 |
DOIs | |
Publication status | Published - 15-May-2020 |
Keywords
- colloidal quantum dots
- field-effect transistors
- light emission
- spectroscopy
- WALLED CARBON NANOTUBES
- COLLOIDAL NANOCRYSTALS
- CHARGE-TRANSPORT
- OPTOELECTRONIC PROPERTIES
- AMBIPOLAR TRANSPORT
- RECOMBINATION ZONE
- SOLAR-CELLS
- THIN-FILMS
- TEMPERATURE
- BRIGHT