Reversible electrical resistance switching in GeSbTe thin films: An electrolytic approach without amorphous-crystalline phase-change

Ramanathaswamy Pandian*, Bart J. Kooi, George Palasantzas, Jeff Th. M. De Hosson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state when the polarity of the applied electric field is reversed. This switching is not connected to the phase-change, as it only occurs in the crystalline phase of the film, but connected to the solid-state electrolytic behavior i.e. high ionic conductivity of (Sb-rich) GeSbTe tinder an electric field. I-V characteristics of nonoptimized capacitor-like prototype cells of various dimensions clearly exhibited the switching behavior when sweeping the Voltage between +1 V and -1 V (starting point: 0 V). The switching was demonstrated also with voltage pulses of amplitudes down to I V and pulse widths down to I microsecond for several hundred of cycles with resistance contrasts up to 150 % between the resistance states. Conductive atomic force microscopy (CAFM) was used to examine PDR switching at nanoscales in tip-written crystalline marks, where the switching occurred for less than 1.5 V with more than three orders of resistance contrasts. Out experiments demonstrated a novel and technologically important switching mechanism, which consumes less power than the usual phase-change switching and provide opportunity to bring together the two resistance switching types (phase-change and PDR) in a single system to extend the applicability of GeSbTe materials.

Original languageEnglish
Title of host publicationMATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES
EditorsDJ Wouters, S Hong, S Soss, O Auciello
Place of PublicationWARRENDALE
PublisherMaterials Research Society
Pages181-186
Number of pages6
ISBN (Print)978-1-60511-041-7
Publication statusPublished - 2008
EventSymposium on Materials Science and Technology for Nonvolatile Memories held at the 2008MRS Spring Meeting - , Canada
Duration: 24-Mar-200827-Mar-2008

Publication series

NameMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
PublisherMATERIALS RESEARCH SOCIETY
Volume1071
ISSN (Print)0272-9172

Other

OtherSymposium on Materials Science and Technology for Nonvolatile Memories held at the 2008MRS Spring Meeting
Country/TerritoryCanada
Period24/03/200827/03/2008

Keywords

  • MEMORY
  • GE2SB2TE5
  • BEHAVIOR

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