Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P.B. Silva; Ruben Alcala; Uygar E. Avci; Nick Barrett; Laura Bégon-Lours; Mattias Borg; Seungyong Byun; Sou Chi Chang; Sang Wook Cheong; Duk Hyun Choe; Jean Coignus; Veeresh Deshpande; Athanasios Dimoulas; Catherine Dubourdieu; Ignasi Fina; Hiroshi Funakubo; Laurent Grenouillet; Alexei Gruverman; Jinseong Heo; Michael Hoffmann; H. Alex Hsain; Fei Ting Huang; Cheol Seong Hwang; Jorge Íñiguez; Jacob L. Jones; Ilya V. Karpov; Alfred Kersch; Taegyu Kwon; Suzanne Lancaster; Maximilian Lederer; Younghwan Lee; Patrick D. Lomenzo; Lane W. Martin; Simon Martin; Shinji Migita; Thomas Mikolajick; Beatriz Noheda; Min Hyuk Park; Karin M. Rabe; Sayeef Salahuddin; Florencio Sánchez; Konrad Seidel; Takao Shimizu; Takahisa Shiraishi; Stefan Slesazeck; Akira Toriumi; Hiroshi Uchida; Bertrand Vilquin; Xianghan Xu; Kun Hee Ye; Uwe Schroeder

doi:10.1063/5.0148068

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P.B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou Chi Chang, Sang Wook Cheong, Duk Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael HoffmannH. Alex Hsain, Fei Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder^*

^*Corresponding author for this work

Solid State Materials for Electronics

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Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO₂-ZrO₂ materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Original language	English
Article number	089201
Number of pages	71
Journal	APL Materials
Volume	11
Issue number	8
DOIs	https://doi.org/10.1063/5.0148068
Publication status	Published - 1-Aug-2023

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Silva, J. P. B., Alcala, R., Avci, U. E., Barrett, N., Bégon-Lours, L., Borg, M., Byun, S., Chang, S. C., Cheong, S. W., Choe, D. H., Coignus, J., Deshpande, V., Dimoulas, A., Dubourdieu, C., Fina, I., Funakubo, H., Grenouillet, L., Gruverman, A., Heo, J., ... Schroeder, U. (2023). Roadmap on ferroelectric hafnia- and zirconia-based materials and devices. APL Materials, 11(8), Article 089201. https://doi.org/10.1063/5.0148068

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title = "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices",

abstract = "Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.",

author = "Silva, {Jos{\'e} P.B.} and Ruben Alcala and Avci, {Uygar E.} and Nick Barrett and Laura B{\'e}gon-Lours and Mattias Borg and Seungyong Byun and Chang, {Sou Chi} and Cheong, {Sang Wook} and Choe, {Duk Hyun} and Jean Coignus and Veeresh Deshpande and Athanasios Dimoulas and Catherine Dubourdieu and Ignasi Fina and Hiroshi Funakubo and Laurent Grenouillet and Alexei Gruverman and Jinseong Heo and Michael Hoffmann and Hsain, {H. Alex} and Huang, {Fei Ting} and Hwang, {Cheol Seong} and Jorge {\'I}{\~n}iguez and Jones, {Jacob L.} and Karpov, {Ilya V.} and Alfred Kersch and Taegyu Kwon and Suzanne Lancaster and Maximilian Lederer and Younghwan Lee and Lomenzo, {Patrick D.} and Martin, {Lane W.} and Simon Martin and Shinji Migita and Thomas Mikolajick and Beatriz Noheda and Park, {Min Hyuk} and Rabe, {Karin M.} and Sayeef Salahuddin and Florencio S{\'a}nchez and Konrad Seidel and Takao Shimizu and Takahisa Shiraishi and Stefan Slesazeck and Akira Toriumi and Hiroshi Uchida and Bertrand Vilquin and Xianghan Xu and Ye, {Kun Hee} and Uwe Schroeder",

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month = aug,

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doi = "10.1063/5.0148068",

language = "English",

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Silva, JPB, Alcala, R, Avci, UE, Barrett, N, Bégon-Lours, L, Borg, M, Byun, S, Chang, SC, Cheong, SW, Choe, DH, Coignus, J, Deshpande, V, Dimoulas, A, Dubourdieu, C, Fina, I, Funakubo, H, Grenouillet, L, Gruverman, A, Heo, J, Hoffmann, M, Hsain, HA, Huang, FT, Hwang, CS, Íñiguez, J, Jones, JL, Karpov, IV, Kersch, A, Kwon, T, Lancaster, S, Lederer, M, Lee, Y, Lomenzo, PD, Martin, LW, Martin, S, Migita, S, Mikolajick, T, Noheda, B, Park, MH, Rabe, KM, Salahuddin, S, Sánchez, F, Seidel, K, Shimizu, T, Shiraishi, T, Slesazeck, S, Toriumi, A, Uchida, H, Vilquin, B, Xu, X, Ye, KH & Schroeder, U 2023, 'Roadmap on ferroelectric hafnia- and zirconia-based materials and devices', APL Materials, vol. 11, no. 8, 089201. https://doi.org/10.1063/5.0148068

TY - JOUR

T1 - Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

AU - Silva, José P.B.

AU - Alcala, Ruben

AU - Avci, Uygar E.

AU - Barrett, Nick

AU - Bégon-Lours, Laura

AU - Borg, Mattias

AU - Byun, Seungyong

AU - Chang, Sou Chi

AU - Cheong, Sang Wook

AU - Choe, Duk Hyun

AU - Coignus, Jean

AU - Deshpande, Veeresh

AU - Dimoulas, Athanasios

AU - Dubourdieu, Catherine

AU - Fina, Ignasi

AU - Funakubo, Hiroshi

AU - Grenouillet, Laurent

AU - Gruverman, Alexei

AU - Heo, Jinseong

AU - Hoffmann, Michael

AU - Hsain, H. Alex

AU - Huang, Fei Ting

AU - Hwang, Cheol Seong

AU - Íñiguez, Jorge

AU - Jones, Jacob L.

AU - Karpov, Ilya V.

AU - Kersch, Alfred

AU - Kwon, Taegyu

AU - Lancaster, Suzanne

AU - Lederer, Maximilian

AU - Lee, Younghwan

AU - Lomenzo, Patrick D.

AU - Martin, Lane W.

AU - Martin, Simon

AU - Migita, Shinji

AU - Mikolajick, Thomas

AU - Noheda, Beatriz

AU - Park, Min Hyuk

AU - Rabe, Karin M.

AU - Salahuddin, Sayeef

AU - Sánchez, Florencio

AU - Seidel, Konrad

AU - Shimizu, Takao

AU - Shiraishi, Takahisa

AU - Slesazeck, Stefan

AU - Toriumi, Akira

AU - Uchida, Hiroshi

AU - Vilquin, Bertrand

AU - Xu, Xianghan

AU - Ye, Kun Hee

AU - Schroeder, Uwe

PY - 2023/8/1

Y1 - 2023/8/1

N2 - Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

AB - Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

UR - http://www.scopus.com/inward/record.url?scp=85170280278&partnerID=8YFLogxK

U2 - 10.1063/5.0148068

DO - 10.1063/5.0148068

M3 - Article

AN - SCOPUS:85170280278

SN - 2166-532X

VL - 11

JO - APL Materials

JF - APL Materials

IS - 8

M1 - 089201

ER -

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

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