Role of Defects in Tuning the Electronic Properties of Monolayer WS2 Grown by Chemical Vapor Deposition

Jie Yang, Pavlo Gordiichuk, Oleksandr Zheliuk, Jianming Lu, Andreas Herrmann, Jianting Ye*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Two-dimensional transition metal dichalcogenides have already attracted enormous research interest. To understand the dependence of electronic properties on the quality and defect morphology is vital for synthesizing high quality materials and the realization of functional devices. Here, we demonstrate the mapping of the conductive variations by conducting atomic force microscopy (C-AFM) in the monolayer tungsten disulfide (WS2) grown by chemical vapor deposition. The electronic properties are strongly affected by the formation of vacancies in monolayer WS2 during growth, which is also verified by the photoluminescence. This spatial study of defects provides opportunities for optimization of the growth process for enhancing devices performance of TMDs monolayers.

Original languageEnglish
Article number1700302
Number of pages4
JournalPhysica status solidi-Rapid research letters
Issue number10
Publication statusPublished - Oct-2017


  • chemical vapor deposition
  • defects
  • transition metal dichalcogenides
  • two-dimensional materials
  • work function
  • WS2

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