Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials

H. J. Kroezen, G. Eising, Gert ten Brink, G. Palasantzas*, B. J. Kooi, A. Pauza

*Corresponding author for this work

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Abstract

The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface potential of the crystalline phase is similar to 30-60 mV higher than that of the amorphous phase. This potential asymmetry is explained qualitatively by the presence of a Schottky barrier at the amorphous-crystalline interface and supported also by quantitative Schottky model calculations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691179]

Original languageEnglish
Article number094106
Pages (from-to)094106-1-094106-4
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 27-Feb-2012

Keywords

  • crystallisation
  • germanium compounds
  • phase change materials
  • Schottky barriers
  • surface potential
  • DATA-STORAGE
  • FILMS

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