Shot noise in NbN SIS junctions suitable for THz radiation detection

P Dieleman*, H van de Stadt, TM Klapwijk, M Schicke, KH Gundlach

*Corresponding author for this work

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    Abstract

    We study the behavior of NbN SIS junctions as radiation detectors with emphasis on the shot noise generated at voltages below the gap voltage. The intrinsically large subgap current of NbN junctions is carried by pinholes with a conduction attributed to multiple Andreev reflection, leading to transported charges q much greater than e. Using this charge enhancement mechanism we explain the junction shot noise characteristics in the unpumped case as well as in the pumped case. The measured mixer noise temperature in the pumped case is more than twice that calculated with standard Tucker theory. The measured double side band noise temperatures are 1450 K at 600 GHz and 2800 K at 950 GHz.

    Original languageEnglish
    Title of host publicationAPPLIED SUPERCONDUCTIVITY 1997, VOLS 1 AND 2
    EditorsH Rogalla, DHA Blank
    Place of PublicationBRISTOL
    PublisherIOP PUBLISHING LTD
    Pages421-424
    Number of pages4
    ISBN (Print)0-7503-0487-1
    Publication statusPublished - 1997
    Event3rd European Conference on Applied Superconductivity (EUCAS 1997) - , Netherlands
    Duration: 30-Jun-19973-Jul-1997

    Publication series

    NameINSTITUTE OF PHYSICS CONFERENCE SERIES
    PublisherIOP PUBLISHING LTD
    ISSN (Print)0951-3248

    Other

    Other3rd European Conference on Applied Superconductivity (EUCAS 1997)
    CountryNetherlands
    Period30/06/199703/07/1997

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