## Abstract

Growth islands due to large mismatch strain arising in Stranski-Krastanow (SK) and Volmer-Weber (VW) film growth can be used to produce large arrays of quantum dots. This same mismatch strain may also cause misfit dislocations to form, presenting a quality control problem. Johnson and Freund (J. Appl. Phys. 81(9), 1997, p6081) developed a two-dimensional model of misfit dislocation nucleation in SK and VW growth islands whereby they predict a power-law relation between misfit strain, epsilon(m), and the minimum island size to nucleate a misfit dislocation, R(c): R(c) proportional to epsilon(1/(lambda-1))(m) where lambda <1 is a function of the island-substrate contact angle. This problem is treated here in three dimensions as an application of a numerical dislocation simulation using the finite element method to take proper boundary conditions into account. The predictions are analyzed in the context of the Johnson-Freund model, and modification of the power-law is shown to be necessary.

Original language | English |
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Title of host publication | ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY |

Editors | M Laudon, B Romanowicz |

Place of Publication | CAMBRIDGE |

Publisher | Computational Mechanics Publications (CMP) |

Pages | 271-274 |

Number of pages | 4 |

ISBN (Print) | 0-9708275-6-3 |

Publication status | Published - 2002 |

Event | 2nd International Conference on Computational Nanoscience and Nanotechnology - , Puerto Rico Duration: 21-Apr-2002 → 25-Apr-2002 |

### Other

Other | 2nd International Conference on Computational Nanoscience and Nanotechnology |
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Country/Territory | Puerto Rico |

Period | 21/04/2002 → 25/04/2002 |

## Keywords

- dislocations
- modelling
- stress-concentration
- quantum dots
- self-assembly