Abstract
Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH4/CH4/H2 mixture at a substrate temperature below 400 °C. Thermal annealing in an argon environment up to 900 °C shows that the films crystallize as μc-Si:H and SiC with a porous microstructure that favours an oxidation process. By a combination of spectroscopic tools comprising Fourier transform infrared, Raman scattering and X-rays photoelectron spectroscopy we show that the films evolve from the amorphous SiHx/SiCH2 structure to nanocrystalline Si and SiC upon annealing at a temperature of 900 °C. A strong RT photoluminescence peak of similar shape has been observed at around 420 nm in both as-deposited and annealed samples. Time-resolved luminescence measurements reveal that this peak is fast decaying with lifetimes ranging from 0.5 to ~1.1 ns.
Original language | English |
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Pages (from-to) | 2661-2664 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) |
Volume | 8 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- Γ-point
- surface states
- excitonic transition
- oscillator strength