Spin accumulation probed in multiterminal lateral all-metallic devices

M. V. Costache*, M. Zaffalon, B. J. van Wees

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

19 Citations (Scopus)
339 Downloads (Pure)

Abstract

We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel barriers. Although the four electrodes are designed as two electrode pairs of the same shape, they nonetheless all exhibit distinct switching fields. As a result the device can have several different magnetic configurations. From the measurements of the amplitude of the spin accumulation, we can identify these configurations, and using the diffusion equation for the spin imbalance, we extract the spin relaxation length lambda(sf)=400 +/- 50 nm and an interface spin current polarization P=(10 +/- 1)% at low temperature and lambda(sf)=350 +/- 50 nm, P=(8 +/- 1)% at room temperature.

Original languageEnglish
Article number012412
Pages (from-to)art. - 012412
Number of pages4
JournalPhysical Review. B: Condensed Matter and Materials Physics
Volume74
Issue number1
DOIs
Publication statusPublished - Jul-2006

Keywords

  • BOUNDARY RESISTANCE
  • ROOM-TEMPERATURE
  • INJECTION
  • SEMICONDUCTOR
  • VALVE

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