Spin transport and spin injection in mesoscopic metal and semiconductor devices

BJ Van Wees*, FJ Jedema, AT Filip

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    We present our recent experiments on spin dependent transport in mesoscopic systems. First we give a basic theoretical description of spin transport in multiterminal devices. It is shown that multiterminal measurements make it possible to fully isolate the spin valve signal from other spurious (magnetoresistance) effects. Experiments on spin transport in metal and low-dimensional semiconductors are discussed. Spin accumulation and spin transport are observed in permalloy/copper spin valves, allowing a determination of the spin flip lengths in copper strips(approximate to 1 mu m at 4.2 K and approximate to 350nm at room temperature). It is shown that the failure to observe spin transport in ferromagnet/semiconductor devices might be explained by "conductivity mismatch" arguments.

    Original languageEnglish
    Title of host publicationElectronic Correlations: From Meso- to Nano-Physics
    EditorsT Martin, G Montambaux, JT ThanhVan
    Place of PublicationCEDEX A
    PublisherE D P SCIENCES
    Pages475-484
    Number of pages10
    ISBN (Print)2-86883-570-8
    Publication statusPublished - 2001
    Event36th Rencontres de Moriond on Electronic Correlations - , France
    Duration: 20-Jan-200127-Jan-2001

    Other

    Other36th Rencontres de Moriond on Electronic Correlations
    CountryFrance
    Period20/01/200127/01/2001

    Keywords

    • MAGNETIC MULTILAYERS
    • MAGNETORESISTANCE
    • INTERFACE
    • CHARGE

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