Spin transport in fully hexagonal boron nitride encapsulated graphene

M. Gurram*, S. Omar, S. Zihlmann, P. Makk, C. Schoenenberger, B. J. van Wees

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

37 Citations (Scopus)

Abstract

We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5-mu m-long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pinhole-free nature of the thin hBN as an efficient tunnel barrier.

Original languageEnglish
Article number115441
Number of pages6
JournalPhysical Review. B: Condensed Matter and Materials Physics
Volume93
Issue number11
DOIs
Publication statusPublished - 29-Mar-2016

Keywords

  • ELECTRONIC-PROPERTIES

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