Spin Transport in High-Quality Suspended Graphene Devices

Marcos H. D. Guimaraes*, A. Veligura, P. J. Zomer, T. Maassen, I. J. Vera-Marun, N. Tombros, B. J. van Arees, B.J. van Wees

*Corresponding author for this work

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Abstract

We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

Original languageEnglish
Pages (from-to)3512-3517
Number of pages6
JournalNano Letters
Volume12
Issue number7
DOIs
Publication statusPublished - Jul-2012

Keywords

  • Suspended graphene
  • spin transport
  • Hanle precession
  • RELAXATION-TIMES
  • SEMICONDUCTOR

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