Spin Transport in High-Quality Suspended Graphene Devices

Marcos H. D. Guimaraes; A. Veligura; P. J. Zomer; T. Maassen; I. J. Vera-Marun; N. Tombros; B. J. van Arees; B.J. van Wees

doi:10.1021/nl301050a

Spin Transport in High-Quality Suspended Graphene Devices

Marcos H. D. Guimaraes^*, A. Veligura, P. J. Zomer, T. Maassen, I. J. Vera-Marun, N. Tombros, B. J. van Arees, B.J. van Wees

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

119 Citations (Scopus)

644 Downloads (Pure)

Abstract

We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

Original language	English
Pages (from-to)	3512-3517
Number of pages	6
Journal	Nano Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1021/nl301050a
Publication status	Published - Jul-2012

Keywords

Suspended graphene
spin transport
Hanle precession
RELAXATION-TIMES
SEMICONDUCTOR

Access to Document

10.1021/nl301050a

2012NanoLettGuimaraesSupp.pdfFinal publisher's version, 481 KB
2012NanoLettGuimaraes.pdfFinal publisher's version, 1.93 MB

Handle.net

Persistent link

Cite this

@article{465ad937ecfd4be8b2cf497ac714e67b,

title = "Spin Transport in High-Quality Suspended Graphene Devices",

abstract = "We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.",

keywords = "Suspended graphene, spin transport, Hanle precession, RELAXATION-TIMES, SEMICONDUCTOR",

author = "Guimaraes, {Marcos H. D.} and A. Veligura and Zomer, {P. J.} and T. Maassen and Vera-Marun, {I. J.} and N. Tombros and {van Arees}, {B. J.} and Wees, {B.J. van}",

year = "2012",

month = jul,

doi = "10.1021/nl301050a",

language = "English",

volume = "12",

pages = "3512--3517",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "AMER CHEMICAL SOC",

number = "7",

}

TY - JOUR

T1 - Spin Transport in High-Quality Suspended Graphene Devices

AU - Guimaraes, Marcos H. D.

AU - Veligura, A.

AU - Zomer, P. J.

AU - Maassen, T.

AU - Vera-Marun, I. J.

AU - Tombros, N.

AU - van Arees, B. J.

AU - Wees, B.J. van

PY - 2012/7

Y1 - 2012/7

N2 - We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

AB - We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

KW - Suspended graphene

KW - spin transport

KW - Hanle precession

KW - RELAXATION-TIMES

KW - SEMICONDUCTOR

U2 - 10.1021/nl301050a

DO - 10.1021/nl301050a

M3 - Article

SN - 1530-6984

VL - 12

SP - 3512

EP - 3517

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Spin Transport in High-Quality Suspended Graphene Devices

Abstract

Keywords

Access to Document

Handle.net

Fingerprint

Cite this