Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors

Mohamad Insan Nugraha; Hiroyuki Matsui; Shun Watanabe; Takayoshi Kubo; Roger Hausermann; Satria Zulkarnaen Bisri; Mykhailo Sytnyk; Wolfgang Heiss; Maria Antonietta Loi; Jun Takeya

doi:10.1002/aelm.201600360

Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors

Mohamad Insan Nugraha, Hiroyuki Matsui, Shun Watanabe, Takayoshi Kubo, Roger Hausermann, Satria Zulkarnaen Bisri, Mykhailo Sytnyk, Wolfgang Heiss, Maria Antonietta Loi, Jun Takeya

Photophysics and OptoElectronics

Research output: Contribution to journal › Letter › Academic › peer-review

22 Citations (Scopus)

58 Downloads (Pure)

Abstract

Mechanical strain effect on lead sulfide (PbS) nanocrystal transistors is demonstrated. By applying compressive strain, the electron mobility is increased up to 45% while the mobility decreases in the opposite strain direction. The results are followed by the change of threshold voltages which originates from the bending of the ligands and the change of carrier traps when the strain is applied.

Original language	English
Article number	1600360
Number of pages	6
Journal	Advanced electronic materials
Volume	3
Issue number	1
DOIs	https://doi.org/10.1002/aelm.201600360
Publication status	Published - Jan-2017

Keywords

THIN-FILM-TRANSISTORS
COLLOIDAL NANOCRYSTALS
ORGANIC SEMICONDUCTORS
ELECTRONIC DEVICES
POST-SYNTHESIS
HIGH-MOBILITY
CIRCUITS
SENSITIVITY
SUBSTRATE
PRESSURE

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Strain-Modulated Charge Transport in Flexible PbSFinal publisher's version, 326 KBLicence: Taverne

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title = "Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors",

abstract = "Mechanical strain effect on lead sulfide (PbS) nanocrystal transistors is demonstrated. By applying compressive strain, the electron mobility is increased up to 45% while the mobility decreases in the opposite strain direction. The results are followed by the change of threshold voltages which originates from the bending of the ligands and the change of carrier traps when the strain is applied.",

keywords = "THIN-FILM-TRANSISTORS, COLLOIDAL NANOCRYSTALS, ORGANIC SEMICONDUCTORS, ELECTRONIC DEVICES, POST-SYNTHESIS, HIGH-MOBILITY, CIRCUITS, SENSITIVITY, SUBSTRATE, PRESSURE",

author = "Nugraha, {Mohamad Insan} and Hiroyuki Matsui and Shun Watanabe and Takayoshi Kubo and Roger Hausermann and Bisri, {Satria Zulkarnaen} and Mykhailo Sytnyk and Wolfgang Heiss and Loi, {Maria Antonietta} and Jun Takeya",

year = "2017",

month = jan,

doi = "10.1002/aelm.201600360",

language = "English",

volume = "3",

journal = "Advanced electronic materials",

issn = "2199-160X",

publisher = "Wiley",

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T1 - Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors

AU - Nugraha, Mohamad Insan

AU - Matsui, Hiroyuki

AU - Watanabe, Shun

AU - Kubo, Takayoshi

AU - Hausermann, Roger

AU - Bisri, Satria Zulkarnaen

AU - Sytnyk, Mykhailo

AU - Heiss, Wolfgang

AU - Loi, Maria Antonietta

AU - Takeya, Jun

PY - 2017/1

Y1 - 2017/1

N2 - Mechanical strain effect on lead sulfide (PbS) nanocrystal transistors is demonstrated. By applying compressive strain, the electron mobility is increased up to 45% while the mobility decreases in the opposite strain direction. The results are followed by the change of threshold voltages which originates from the bending of the ligands and the change of carrier traps when the strain is applied.

AB - Mechanical strain effect on lead sulfide (PbS) nanocrystal transistors is demonstrated. By applying compressive strain, the electron mobility is increased up to 45% while the mobility decreases in the opposite strain direction. The results are followed by the change of threshold voltages which originates from the bending of the ligands and the change of carrier traps when the strain is applied.

KW - THIN-FILM-TRANSISTORS

KW - COLLOIDAL NANOCRYSTALS

KW - ORGANIC SEMICONDUCTORS

KW - ELECTRONIC DEVICES

KW - POST-SYNTHESIS

KW - HIGH-MOBILITY

KW - CIRCUITS

KW - SENSITIVITY

KW - SUBSTRATE

KW - PRESSURE

U2 - 10.1002/aelm.201600360

DO - 10.1002/aelm.201600360

M3 - Letter

SN - 2199-160X

VL - 3

JO - Advanced electronic materials

JF - Advanced electronic materials

IS - 1

M1 - 1600360

ER -

Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors

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