Strongly reduced band gap in a correlated insulator in close proximity to a metal

R. Hesper, L.H Tjeng, G.A Sawatzky

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Abstract

Using a combination of photoelectron and inverse photoelectron spectroscopy, we show that the band gap in a monolayer of C-60 on a Ag surface is strongly reduced from the solid C-60 surface value. We argue that this is a result of the reduction of the on-site molecular Coulomb interaction due to the influence of image charges in the metal substrate. This result suggests that the physical properties of correlated insulators and semiconductors will be strongly modified if prepared in ultra thin form on metal substrates or sandwiched between metal layers.

Original languageEnglish
Pages (from-to)177-182
Number of pages6
JournalEurophysics Letters
Volume40
Issue number2
Publication statusPublished - 15-Oct-1997

Keywords

  • IMAGE INTERACTIONS
  • ELECTRONIC STATES
  • OXIDE INTERFACES
  • FULLERENE FILMS
  • SURFACE-STATES
  • POINT-DEFECTS
  • SOLID C-60
  • DOPED C-60
  • PHOTOEMISSION
  • SPECTROSCOPY

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