Superconducting Dome in a Gate-Tuned Band Insulator

J. T. Ye*, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, Y. Iwasa*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

786 Citations (Scopus)

Abstract

A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS2, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T-c occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

Original languageEnglish
Pages (from-to)1193-1196
Number of pages4
JournalScience
Volume338
Issue number6111
DOIs
Publication statusPublished - 30-Nov-2012
Externally publishedYes

Keywords

  • TRANSITION-TEMPERATURE
  • SEMICONDUCTING SRTIO3
  • MOLYBDENUM-DISULFIDE
  • TRANSISTORS
  • PHYSICS
  • STATE

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