Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

S.Z. Denega; Thorsten Last; J. Liu; A. Slachter; P.J. Rizo; P.H.M. van Loosdrecht; B.J. van Wees; D. Reuter; A.D. Wieck; C.H. van der Wal

doi:10.1103/PhysRevB.81.153302

Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

S.Z. Denega, Thorsten Last, J. Liu, A. Slachter, P.J. Rizo, P.H.M. van Loosdrecht, B.J. van Wees, D. Reuter, A.D. Wieck, C.H. van der Wal

Zernike Institute for Advanced Materials

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Abstract

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

Original language	English
Article number	153302
Pages (from-to)	11-15
Number of pages	4
Journal	Physical Review. B: Condensed Matter and Materials Physics
Volume	81
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.81.153302
Publication status	Published - 12-Apr-2010

Keywords

QUANTUM-WELLS
POLARIZATION
ANISOTROPY

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Denega, S. Z., Last, T., Liu, J., Slachter, A., Rizo, P. J., Loosdrecht, P. H. M. V., Wees, B. J. V., Reuter, D., Wieck, A. D., & Wal, C. H. V. D. (2010). Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. Physical Review. B: Condensed Matter and Materials Physics, 81(15), 11-15. Article 153302. https://doi.org/10.1103/PhysRevB.81.153302

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title = "Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms",

abstract = "We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.",

keywords = "QUANTUM-WELLS, POLARIZATION, ANISOTROPY",

author = "S.Z. Denega and Thorsten Last and J. Liu and A. Slachter and P.J. Rizo and Loosdrecht, {P.H.M. van} and Wees, {B.J. van} and D. Reuter and A.D. Wieck and Wal, {C.H. van der}",

note = "Relation: http://www.rug.nl/zernike/ Rights: University of Groningen, Zernike Institute for Advanced Materials",

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doi = "10.1103/PhysRevB.81.153302",

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Denega, SZ, Last, T, Liu, J, Slachter, A, Rizo, PJ, Loosdrecht, PHMV, Wees, BJV, Reuter, D, Wieck, AD & Wal, CHVD 2010, 'Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms', Physical Review. B: Condensed Matter and Materials Physics, vol. 81, no. 15, 153302, pp. 11-15. https://doi.org/10.1103/PhysRevB.81.153302

Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. / Denega, S.Z.; Last, Thorsten; Liu, J. et al.
In: Physical Review. B: Condensed Matter and Materials Physics, Vol. 81, No. 15, 153302, 12.04.2010, p. 11-15.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

AU - Denega, S.Z.

AU - Last, Thorsten

AU - Liu, J.

AU - Slachter, A.

AU - Rizo, P.J.

AU - Loosdrecht, P.H.M. van

AU - Wees, B.J. van

AU - Reuter, D.

AU - Wieck, A.D.

AU - Wal, C.H. van der

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PY - 2010/4/12

Y1 - 2010/4/12

N2 - We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

AB - We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

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KW - POLARIZATION

KW - ANISOTROPY

U2 - 10.1103/PhysRevB.81.153302

DO - 10.1103/PhysRevB.81.153302

M3 - Article

SN - 1098-0121

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JO - Physical Review. B: Condensed Matter and Materials Physics

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