Abstract
Growth front roughening characteristics of vacuum deposited pentamer 2,5-di-n-octyloxy-1,4-bis[4-(styryl)styryl]-benzene oligomer thin films, onto silicon substrates, strongly depend on the substrate temperature in the range ∼20 °C–100 °C. The measured roughness exponents H increase from H≈0.4 at low substrate temperatures where growth is dominated by vacancy formation, to H≈0.7–0.8 at elevated temperatures where diffusive growth takes place. Moreover, the root-mean-square roughness amplitude and the correlation length evolve with temperature closely as an Arrhenius process with activation barrier comparable to molecule transnational and rotational barriers on oligomer surfaces.
Original language | English |
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Pages (from-to) | 4528 - 4530 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2002 |
Keywords
- CHARGE-TRANSPORT
- SCALING BEHAVIOR
- THIN
- MICROSCOPY
- POLYMERS