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The effect of oxygen exposure on pentacene thin film electronic structure

  • A. Vollmer*
  • , O. D. Jurchescu
  • , I. Arfaoui
  • , I. Salzmann
  • , T. T.M. Palstra
  • , P. Rudolf
  • , J. Niemax
  • , J. Pflaum
  • , J. P. Rabe
  • , N. Koch
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We use ultraviolet photoelectron spectroscopy to investigate the effect of oxygen and air exposure on the electronic structure of pentacene thin films. It is found that O2 and water do not react noticeably with pentacene, whereas singlet oxygen/ozone readily oxidize the organic compound. Also, we obtain no evidence for considerable p-type doping of pentacene by O2 at low pressure. However, oxygen exposure lowers the hole injection barrier at the interface between Au and pentacene by 0.25 eV, presumably due to a modification of the Au surface.

Original languageEnglish
Title of host publicationOrganic Thin-Film Electronics
PublisherMaterials Research Society
Chapter346
Pages120-125
Number of pages6
ISBN (Print)155899825X, 9781558998254
DOIs
Publication statusPublished - 2005
Event2005 MRS Spring Meeting - San Francisco, CA, United States
Duration: 28-Mar-20051-Apr-2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume871
ISSN (Print)0272-9172

Conference

Conference2005 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period28/03/200501/04/2005

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