The photofield effect in a-Si: H thin film MOS transistors Theory and measurement

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Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

Original language	English
Pages (from-to)	59-70
Number of pages	12
Journal	Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties
Volume	52
Issue number	1
DOIs	https://doi.org/10.1080/13642818508243165
Publication status	Published - 1985

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title = "The photofield effect in a-Si: H thin film MOS transistors Theory and measurement",

author = "A.O. Harm and RE.I. Schropp and J.F. Verwey",

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journal = "Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties",

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T1 - The photofield effect in a-Si: H thin film MOS transistors Theory and measurement

AU - Harm, A.O.

AU - Schropp, RE.I.

AU - Verwey, J.F.

PY - 1985

Y1 - 1985

U2 - 10.1080/13642818508243165

DO - 10.1080/13642818508243165

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SN - 0141-8637

VL - 52

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JO - Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties

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