The retention of krypton in polycrystalline silicon during high-temperature annealing

M. J. W. Greuter; L. Niesen; A. Van Veen; J. H. Evans

doi:10.1080/09500839408240981

The retention of krypton in polycrystalline silicon during high-temperature annealing

M. J. W. Greuter^*, L. Niesen, A. Van Veen, J. H. Evans

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert gas release occurs at homologous temperatures below about 0.7 of the melting point. The marked retention efficiency in silicon is consistent with its anomalously low concentration of thermal vacancies.

Original language	English
Pages (from-to)	241-245
Number of pages	5
Journal	Philosophical Magazine Letters
Volume	70
Issue number	4
DOIs	https://doi.org/10.1080/09500839408240981
Publication status	Published - Oct-1994

Keywords

POSITRON-ANNIHILATION
FORMATION ENTHALPY
GAS-RELEASE
BUBBLES
UO2

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title = "The retention of krypton in polycrystalline silicon during high-temperature annealing",

abstract = "In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert gas release occurs at homologous temperatures below about 0.7 of the melting point. The marked retention efficiency in silicon is consistent with its anomalously low concentration of thermal vacancies.",

keywords = "POSITRON-ANNIHILATION, FORMATION ENTHALPY, GAS-RELEASE, BUBBLES, UO2",

author = "Greuter, {M. J. W.} and L. Niesen and {Van Veen}, A. and Evans, {J. H.}",

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AU - Greuter, M. J. W.

AU - Niesen, L.

AU - Van Veen, A.

AU - Evans, J. H.

PY - 1994/10

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N2 - In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert gas release occurs at homologous temperatures below about 0.7 of the melting point. The marked retention efficiency in silicon is consistent with its anomalously low concentration of thermal vacancies.

AB - In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert gas release occurs at homologous temperatures below about 0.7 of the melting point. The marked retention efficiency in silicon is consistent with its anomalously low concentration of thermal vacancies.

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KW - FORMATION ENTHALPY

KW - GAS-RELEASE

KW - BUBBLES

KW - UO2

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DO - 10.1080/09500839408240981

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