The retention of krypton in polycrystalline silicon during high-temperature annealing

M. J. W. Greuter*, L. Niesen, A. Van Veen, J. H. Evans

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert gas release occurs at homologous temperatures below about 0.7 of the melting point. The marked retention efficiency in silicon is consistent with its anomalously low concentration of thermal vacancies.

    Original languageEnglish
    Pages (from-to)241-245
    Number of pages5
    JournalPhilosophical Magazine Letters
    Volume70
    Issue number4
    DOIs
    Publication statusPublished - Oct-1994

    Keywords

    • POSITRON-ANNIHILATION
    • FORMATION ENTHALPY
    • GAS-RELEASE
    • BUBBLES
    • UO2

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