Abstract
We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside optical waveguides. Bringing the electron ensembles in a quantum Hall state gives selection rules for optical transitions across the gap that can selectively address the two electron spin states. Long-lived superpositions of these electron spin states can then be controlled with a pair of optical fields that form a resonant Raman system. Entangled states of spin-wave modes are prepared by applying quantum-optical measurement techniques to optical signal pulses that result from Raman transitions in the electron ensembles. (C) 2008 Elsevier Masson SAS. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 935-941 |
| Number of pages | 7 |
| Journal | Solid State Sciences |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May-2009 |
| Event | Symposium N on Solid State Approaches to Quantum Information Processing and Communication held at the 2007 EMRS Spring Meeting - , France Duration: 28-May-2007 → 1-Jun-2007 |
Keywords
- Entanglement
- Quantum optics
- Electromagnetically induced transparency
- Spin waves
- Quantum Hall effect
- Semiconductors
- Quantum well materials
- ELECTROMAGNETICALLY INDUCED TRANSPARENCY
- ATOMIC ENSEMBLES
- BELL INEQUALITIES
- PHOTON STATES
- RESONANCE
- SYSTEM
- VIOLATION
- EXCITONS
- CAVITY