Tunnel junction based memristors as artificial synapses

Andy Thomas*, Stefan Niehoerster, Savio Fabretti, Norman Shepheard, Olga Kuschel, Karsten Kuepper, Joachim Wollschlaeger, Patryk Kzysteczko, Elisabetta Chicca

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

23 Citations (Scopus)
7 Downloads (Pure)

Abstract

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.

Original languageEnglish
Article number241
Number of pages9
JournalFrontiers in Neuroscience
Volume9
DOIs
Publication statusPublished - 7-Jul-2015
Externally publishedYes

Keywords

  • memristors
  • artificial synapses
  • tunnel junction
  • synaptic plasticity
  • neuromorphic systems
  • TANTALUM OXIDE
  • THIN-FILMS
  • NETWORK
  • NEURONS
  • DEVICE
  • CONDUCTANCE
  • MECHANISMS
  • PLASTICITY
  • DEPENDENCE
  • OXIDATION

Cite this