Two-channel model for spin-relaxation noise

S. Omar; B.J. van Wees; I.J. Vera-Marun

doi:10.1103/PhysRevB.96.235439

Two-channel model for spin-relaxation noise

S. Omar, B.J. van Wees, I.J. Vera-Marun

Physics of Nanodevices

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Abstract

We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin-dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.

Original language	English
Article number	235439
Journal	Physical Review. B: Condensed Matter and Materials Physics
Volume	96
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.96.235439
Publication status	Published - 26-Dec-2017

Keywords

SPIN FLUCTUATIONS
spin relaxation noise

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10.1103/PhysRevB.96.235439

Two-channel model for spin-relaxation noiseFinal publisher's version, 273 KBLicence: Taverne

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title = "Two-channel model for spin-relaxation noise",

abstract = "We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin-dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.",

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N2 - We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin-dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.

AB - We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin-dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.

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DO - 10.1103/PhysRevB.96.235439

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Two-channel model for spin-relaxation noise

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