Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance

Zhiying Dan, Baoxiang Yang, Qiqi Song, Jianru Chen, Hengyi Li, Wei Gao*, Le Huang, Menglong Zhang, Mengmeng Yang, Zhaoqiang Zheng, Nengjie Huo, Lixiang Han*, Jingbo Li*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

47 Citations (Scopus)
248 Downloads (Pure)

Abstract

In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = −60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.

Original languageEnglish
Pages (from-to)18101-18113
Number of pages13
JournalACS Applied Materials and Interfaces
Volume15
Issue number14
DOIs
Publication statusPublished - 12-Apr-2023

Keywords

  • 2D van der Waals heterostructure photodetector
  • 2H-MoTe
  • BiOSe
  • gate-modulation photovoltaic effect
  • type-II band alignment

Fingerprint

Dive into the research topics of 'Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance'. Together they form a unique fingerprint.

Cite this