Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible-Near-Infrared Photodetectors

Zhiyang Zhang, Lixiang Han, Zhiying Dan, Hengyi Li, Mengmeng Yang, Yiming Sun, Zhaoqiang Zheng, Nengjie Huo, Dongxiang Luo, Wei Gao*, Jingbo Li*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

23 Citations (Scopus)
120 Downloads (Pure)

Abstract

Bi2O2Se nanosheets, an emerging ternary non-van der Waals two-dimensional (2D) material, have garnered considerable research attention in recent years owing to their robust air stability, narrow indirect bandgap, high mobility, and diverse intriguing properties. However, most of them show high dark current and relatively low light on/off ratio and slow response speed because of the large charge carrier concentration and bolometric effect, hindering their further application in low-energy-consuming optoelectronics. Herein, a homotype van der Waals heterostructure based on exfoliated n-InSe integrated with chemical vapor deposition (CVD)-grown n-Bi2O2Se nanosheets that have type II band alignment was fabricated. The efficient interfacial charge separation, strong interlayer coupling, and effective built-in electric field across the heterointerface demonstrated excellent, stable, and broadband self-driven photodetection in the range 400-1064 nm. Specifically, a high responsivity (R) of 75.2 mA·W-1 and a high specific detectivity (D*) of 1.08 × 1012 jones were achieved under 405 nm illumination. Additionally, a high R of 13.3 mA·W-1 and a high D* of 2.06 × 1011 jones were achieved under 980 nm illumination. Meanwhile, an ultrahigh Ilight/Idark ratio over 105 and a fast response time of 5.8/15 ms under 405 nm illumination confirmed the excellent photosensitivity and fast response behavior. Furthermore, R could be enhanced to 13.6 and 791 mA·W-1 under 405 and 980 nm illumination at a drain-source voltage (Vds) of 1 V, respectively, originating from a lower potential barrier. This study suggested that the Bi2O2Se nanosheet/InSe nanoflake homotype heterojunction can offer potential applications in next-generation broadband photodetectors that consume low energy and exhibit high performance.

Original languageEnglish
Pages (from-to)4573-4583
Number of pages11
JournalACS Applied Nano Materials
Volume6
Issue number6
DOIs
Publication statusPublished - 24-Mar-2023

Keywords

  • BiOSe
  • InSe
  • photovoltaic effect
  • type II band alignment
  • van der Waals heterostructure

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