Abstract
Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction of the minimum critical fluence required for optical-induced amorphization when compared to the thin-film cases. We show that by using single-shot laser pulses, the investigated nanoparticles display a crystalline-to-amorphous transition, satisfying a mandatory requirement of a bit-memory element. These unprecedented results open a viable route to boost energy efficient phase-change processes.
Original language | English |
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Pages (from-to) | 16574-16580 |
Number of pages | 7 |
Journal | Nanoscale |
Volume | 10 |
Issue number | 35 |
DOIs | |
Publication status | Published - 21-Sept-2018 |
Keywords
- STRUCTURAL TRANSITIONS
- GE2SB2TE5
- MEMORY
- FILMS
- NONVOLATILE
- DISORDER
- NANOWIRE
- MEDIA