Ultrathin SnTe films as a route towards all-in-one spintronics devices

Jagoda Slawinska*, Frank T. Cerasoli, Priya Gopal, Marcio Costa, Stefano Curtarolo, Marco Buongiorno Nardelli

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Abstract

Spin transistors based on a semiconducting channel attached to ferromagnetic electrodes suffer from fast spin decay and extremely low spin injection/detection efficiencies. Here, we propose an alternative all-in-one spin device whose operation principle relies on electric manipulation of the spin lifetime in two-dimensional (2D) SnTe, in which the sizable spin Hall effect eliminates the need for using ferromagnets. In particular, we explore the persistent spin texture (PST) intrinsically present in the ferroelectric phase which protects the spin from decoherence and supports extraordinarily long spin lifetime. Our first-principles calculations followed by symmetry arguments revealed that such a spin wave mode can be externally detuned by perpendicular electric field, leading to spin randomization and decrease in spin lifetime. We further extend our analysis to ultrathin SnTe films and confirm the emergence of PST as well as a moderate enhancement of intrinsic spin Hall conductivity. The recent room-temperature observation of the ferroelectric phase in 2D-SnTe suggests that novel all-electric spintronics devices are within reach.

Original languageEnglish
Article number025026
Number of pages7
Journal2D Materials
Volume7
Issue number2
DOIs
Publication statusPublished - Apr-2020
Externally publishedYes

Keywords

  • spin transistor
  • persistent spin helix
  • spin Hall effect
  • 2D SnTe
  • spintronics
  • first principles calculations
  • spin texture

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