Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy

Alejandro O. Leon*, Gerrit E. W. Bauer

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review


The control of magnetic materials and devices by voltages without electric currents holds the promise of power-saving nano-scale devices. Here we study the temperature-dependent voltage control of the magnetic anisotropy caused by rare-earth (RE) local moments at an interface between a magnetic metal and a non-magnetic insulator, such as Co|(RE)|MgO. Based on a Stevens operator representation of crystal and applied field effects, we find large dominantly quadrupolar intrinsic and field-induced interface anisotropies at room temperature. We suggest improved functionalities of transition metal tunnel junctions by dusting their interfaces with rare earths.

Original languageEnglish
Article number404004
Number of pages8
JournalJournal of Physics-Condensed Matter
Issue number40
Publication statusPublished - 23-Sep-2020


  • voltage
  • rare-earth anisotropy
  • voltage-controlled magnetic anisotropy
  • SPIN

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